English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Doping in the chalcopyrite Cu(In,Ga)Se2 is determined by intrinsic pointdefects. In the ternary CuInSe2, both N-type and P-type conductivity can beobtained depending on the growth conditions and stoichiometry: N-type isobtained when grown Cu-poor, Se-poor and alkali-free. CuGaSe2, on the otherhand, is found to be always a P-type semiconductor that seems to resist allkinds of N-type doping no matter whether it comes from native defects orextrinsic impurities. In this contribution, we study the N-to-P transition inCu-poor Cu(In,Ga)Se2 single crystals in dependence of the gallium content. Ourresults show that Cu(In,Ga)Se2 can still be grown as an N-type semiconductoruntil the gallium content reaches the critical concentration of 15-19%, wherethe N-to-P transition occurs. Furthermore, trends in the Seebeck coefficientand activation energies extracted from temperature-dependent conductivitymeasurements, demonstrate that the carrier concentration drops by around twoorders of magnitude near the transition concentration. Our proposed modelexplains the N-to-P transition based on the differences in formation energiesof donor and acceptor defects caused by the addition of gallium.

How much gallium do we need for a p-type Cu(In,Ga)Se2?