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This paper presents a comprehensive study of the performance of Sezawasurface acoustic wave (SAW) devices in SweGaN QuanFINE ultrathin GaN/SiCplatform, reaching frequencies above 14 GHz for the first time. Sezawa modefrequency scaling is achieved due to the elimination of the thick buffer layertypically present in epitaxial GaN technology. Finite element analysis (FEA) isfirst performed to find the range of frequencies over which the Sezawa mode issupported in the grown structure. Transmission lines and resonance cavitiesdriven with Interdigital Transducers (IDTs) are designed, fabricated, andcharacterized. Modified Mason circuit models are developed for each class ofdevices to extract critical performance metrics. We observe a strongcorrelation between measured and simulated dispersion of the phase velocity(vp) and piezoelectric coupling coefficient (k^2). Maximum k^2 of 0.61% andfrequency-quality factor product (f.Qm) of 6x10^12 1/s are achieved for Sezawaresonators at 11 GHz, with a minimum propagation loss of 0.26 dB/wavelength forthe two-port devices. Sezawa modes are observed at frequencies spanning up to14.3 GHz, achieving a record high in GaN microelectromechanical systems (MEMS)to the best of the authors' knowledge.

Super-High-Frequency Low-Loss Sezawa Mode SAW Devices in a GaN/SiC Platform