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It is known that carrier mobility in layered semiconductors generallyincreases from two-dimension (2D) to three-dimension due to suppressedscattering channels resulting from decreased densities of electron and phononstates. In this work, we find an abnormal decrease of electron mobility frommonolayer to bulk MoS2. By carefully analyzing the scattering mechanisms, wecan attribute such abnormality to the stronger intravalley scattering in themonolayer but weaker intervalley scattering caused by less intervalleyscattering channels and weaker corresponding electron-phonon couplings comparedto the bulk case. We show that, it is the matching between electronic bandstructure and phonon spectrum rather than their densities of electronic andphonon states that determines scattering channels. We propose, for the firsttime, the phonon-energy-resolved matching function to identify the intra- andinter-valley scattering channels. Furthermore, we show that multiple valleys donot necessarily lead to strong intervalley scattering if: (1) the scatteringchannels, which can be explicitly captured by the distribution of the matchingfunction, are few due to the small matching between the corresponding electronand phonon bands; and/or (2) the multiple valleys are far apart in thereciprocal space and composed of out-of-plane orbitals so that thecorresponding electron-phonon coupling strengths are weak. Consequently, thesearching scope of high-mobility 2D materials can be reasonably enlarged usingthe matching function as useful guidance with the help of band edge orbitalanalysis.

Abnormally weak intervalley electron scattering in MoS2 monolayer: insights from the matching between electron and phonon bands