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The need of surface-localized thermal processing is strongly increasingespecially w.r.t three-dimensionally (3D) integrated electrical devices. UVlaser annealing (UV-LA) technology well addresses this challenge. ParticularlyUV-LA can reduce resistivity by enlarging metallic grains in lines or thinfilms, irradiating only the interconnects for short timescales. However, therisk of failure in electrical performance must be correctly managed, and thatof UV-LA has not been deeply studied yet. In this work microsecond-scale UV-LAis applied on a stack comparable to an interconnect structure(dielectric/Cu/Ta/SiO2/Si) in either melt or sub-melt regime for grain growth.The failure modes such as (i) Cu diffusion into SiO2, (ii) O incorporation intoCu, and (iii) intermixing between Cu and Ta are investigated.

Failure Mode Analysis in Microsecond UV Laser Annealing of Cu Thin Films