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Two-dimensional polyaniline with C$_3$N stoichiometry, is a newly fabricatedlayered material that has been expected to possess fascinating electronic,thermal, mechanical and chemical properties. The nature of its counterpartnano-ribbons/structures offering even more tunability in property because ofthe unique quantum confinement and edge effect, however, has not been revealedsufficiently. Here, using the first-principles calculation based on densityfunctional theory and nonequilibrium Green's function technique, we firstperform a study on the electron band structure of armchair C$_3$N nanoribbons(AC$_3$NNRs) without and with H-passivation. The calculated results show thatthe pristine AC$_3$NNRs are metal, while the H-passivated ones are eitherdirect or indirect band gap semiconductors depending on the detailed edgeatomic configurations. Then we propose a lateral planar homogenous junctionwith an interface between the pristine and H-passivated AC$_3$NNRs, in whichforms a Schottky-like barrier. Interestingly, our further transport calculationdemonstrates that this AC$_3$NNRs-based heterojunction exhibits a goodrectification behavior. In specification, the average rectification ratio (RR)can reach up to $10^3$ in the bias regime from 0.2 to 0.4 V. Particularly,extending the length of semiconductor part in the heterojunction leads to thedecrease of the current through the junction, but the RR can be enlargedobviously. The average RR increases to the order of $10^4$ in the bias from0.25 to 0.40 V, with the boosted maximum up to $10^5$ at 0.35 V. The findingsof this work may be serviceable for the design of functional nanodevices basedon AC$_3$NNRs in the future.

High rectifying performance of heterojunctions with interface between armchair C$_3$N nanoribbons with and without edge H-passivation