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In an all-van der Waals heterostructure, the active layer, gate dielectricsand gate electrodes are assembled from two-dimensional crystals that have a lowdensity of atomic defects. This design allows two-dimensional electron systemswith very low disorder to be created, particularly in heterostructures wherethe active layer also has intrinsically low disorder, such as crystallinegraphene layers or metal dichalcogenide heterobilayers. A key missingingredient has been nanoscale electrostatic control, with existing methods forfabricated local gates typically introducing unwanted contamination. Here wedescribe a resist-free local anodic oxidation process for patterning sub 100nmfeatures in graphite gates, and their subsequent integration into an all-vander Waals heterostructure. We define a quantum point contact in the fractionalquantum Hall regime as a benchmark device and observe signatures of chiralLuttinger liquid behaviour, indicating an absence of extrinsic scatteringcentres in the vicinity of the point contact. In the integer quantum Hallregime, we demonstrate in situ control of the edge confinement potential, a keyrequirement for the precision control of chiral edge states. This technique mayenable the fabrication of devices capable of single anyon control and coherentedge-state interferometry in the fractional quantum Hall regime.

Nanoscale electrostatic control in ultra clean van der Waals heterostructures by local anodic oxidation of graphite gates