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In an all-van der Waals heterostructure, the active layer, gate dielectrics,and gate electrodes are all assembled from two-dimensional crystals. Owing tothe absence of dangling bonds within their two-dimensional bulk, these deviceshost ultraclean electron systems. Here, we describe methods for implementingnanoscale electrostatic control without contaminating critical interfaces.Using a resist-free local anodic oxidation process, we pattern sub-100nmfeatures in graphite gates which are then integrated into the heterostructure.Using a quantum point contact as a benchmark device, we demonstrate selectivepartitioning of both integer and fractional quantum Hall edge modes at highmagnetic fields. Furthermore, we find evidence for fragile interaction-drivenedge reconstruction effects, including the formation of a quantum dot at anelectrostatic potential saddle point. Our results pave the way for precisionnanoscale experiments on correlated states in these materials, including singleanyon control in the fractional quantum Hall regime.

Tunable fractional quantum Hall point contacts in graphene via local anodic oxidation of graphite gates