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Annealing Mg-implanted homoepitaxial GaN at temperatures at or above 1400{\deg}C eliminates the formation of inversion domains and leads to improveddopant activation efficiency. Extended defects in the form of inversion domainscontain electrically inactive Mg after post-implantation annealing attemperatures as high as 1300 {\deg}C (one GPa N2 overpressure), which resultsin a low dopant activation efficiency. Triple axis X-ray data show that theimplant-induced strain is fully relieved after annealing at 1300 {\deg}C for 10min, indicating that the strain-inducing point defects formed duringimplantation have reconfigured. However, annealing at temperatures of 1400{\deg}C to 1500 {\deg}C (also one GPa N2 overpressure) eliminates the presenceof the inversion domains. Annealing at these higher temperatures and for alonger time does not have any further impact on the strain state. Whileresidual defects, such as dislocation loops, still exist after annealing at andabove 1400 {\deg}C, chemical analysis at the dislocation loops shows no sign ofMg segregation. Meanwhile, an overall decreasing trend in the dislocation loopsize and density is observed after annealing at higher temperatures and longertimes. Earlier work [1] addressing electrical measurements of these types ofsamples showed that annealing at 1400 {\deg}C leads to a dopant activationefficiency that is an order of magnitude higher than that observed at 1300{\deg}C. This work complements the earlier work by identifying the microscopicdefects (inversion domains) which incorporate Mg, and points to the benefits,in terms of defect density and p-type dopant activation, of using highertemperatures annealing cycles to activate Mg in GaN.

Defects Evolution and Mg Segregation in Mg-implanted GaN with Ultra-High-Pressure Annealing