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Perpendicular shape anisotropy (PSA) and double magnetic tunnel junctions(DMTJ) offer practical solutions to downscale spin-transfer-torque MagneticRandom-Access Memory (STT-MRAM) beyond 20 nm technology nodes, whilst retainingtheir thermal stability and reducing critical currents applied. However, asthese modern devices become smaller and three-dimensionally (3D) complex, ourunderstanding of their functional magnetic behavior is often indirect, relyingon magnetoresistance measurements and micromagnetic modelling. In this paper,we review recent work that was performed on these structures using a range ofadvanced electron microscopy techniques, focusing on aspects specific to the 3Dand nanoscale nature of such elements. We present the methodology for thesystematic transfer of individual SST-MRAM nano-pillars from large-scale arraysto image their magnetic configurations directly using off-axis electronholography. We show that improved phase sensitivity through stacking ofelectron holograms can be used to image subtle variations in DMTJs and thethermal stability of < 20 nm PSA-STT-MRAM nano-pillars during in-situ heating.The experimental practicalities, benefits and limits of using electronholography for analysis of MRAM devices are discussed, unlocking practicalpathways for direct imaging of the functional magnetic performance of thesesystems with high spatial resolution and sensitivity.

Off-axis electron holography for the direct visualization of perpendicular shape anisotropy in nano-scale 3D magnetic random-access-memory devices