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The layered van der Waals (vdW) material MnBi$_2$Te$_4$ is an intrinsicmagnetic topological insulator with various topological phases such as quantumanomalous Hall effect (QAHE) and axion states. However, both the zero-field andhigh-temperature QAHE are not easy to realize. It is theoretically proposedthat the exchange bias can be introduced in the MnBi2Te4/ferromagnetic (FM)insulator heterostructures and thus opens the surface states gap, making iteasier to realize the zero-field or high-temperature QAHE. Here we report theelectrically tunable exchange bias in the van der WaalsMnBi$_2$Te$_4$/Cr$_2$Ge$_2$Te$_6$ heterostructure. The exchange bias emergesover a critical magnetic field and reaches the maximum value near the magneticband gap. Moreover, the exchange bias was experienced by the antiferromagnetic(AFM) MnBi$_2$Te$_4$ layer rather than the FM layer. Such van der Waalsheterostructure provides a promising platform to study the novel exchange biaseffect and explore the possible high-temperature QAHE.

Exchange bias in van der Waals MnBi$_2$Te$_4$/Cr$_2$Ge$_2$Te$_6$ heterostructure