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Transition metal oxides (TMOs) and post-TMOs (PTMOs), when doped with Carbon,show non-volatile current-voltage (I-V) characteristics, which are bothuniversal and repeatable. We have shown spectroscopic evidence of theintroduction of carbon-based impurity states inside the existing larger bandgapeffectively creating a smaller bandgap which we suggest could enable Mott-likecorrelation effect. Our findings indicate new insights for yet to be understoodunipolar and nonpolar resistive switching in the TMOs and PTMOs. We have shownthat device switching is not thermal-energy dependent and have developed anelectronic-dominated switching model that allows for the extreme temperatureoperation (from 1.5 K to 423 K) and state retention up to 673 K for a 1-hourbake. Importantly, we have optimized the technology in an industrial processand demonstrated integrated 1-transistor/1-resistor (1T1R) arrays up to 1 kbitwith 47 nm devices on 300 mm wafers for advanced node CMOS-compatiblecorrelated electron RAM (CeRAM). These devices are shown to operate with 2 nswrite pulses and retain the memory states up to 200 C for 24 hours. Thecollection of attributes shown, including scalability to state-of-the-artdimensions, non-volatile operation to extreme low and high temperatures, fastwrite, and reduced stochasticity as compared to filamentary memories such asReRAMs show the potential for a highly capable two-terminal back-end-of-linenon-volatile memory.

Universal Non-Polar Switching in Carbon-doped Transition Metal Oxides (TMOs) and Post TMOs