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This work reports the dynamics of transient hole doping in epitaxial graphenedevices by using nitric acid as an adsorbent. The timescales associated withcorresponding desorption processes are extracted from the data. Theunderstanding of reversible hole doping without gating is of crucial importanceto those fabricating devices with a particular functionality. Measurements ofthe electrical and optical properties of several devices post-exposure wereperformed with transport temperatures between 300 K and 1.5 K. Ambientconditions are applied to non-transport measurements to replicate the mostlikely laboratory conditions for handling devices using this doping method. Therelevant timescales from transport measurements are compared with results fromRaman spectroscopy measurements.

Timescales for Nitric Acid Desorption in Epitaxial Graphene Devices