English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

An analysis of the oxide trapped charge noise in a MOSFET operated down todeep cryogenic temperatures is proposed. To this end, a revisited derivation ofthe interface trap conductance Gp and oxide trapped charge noise SQt at theSiO2/Si MOS interface is conducted under very low temperature condition, whereFermi-Dirac statistics applies. A new relation between the oxide trapped chargenoise SQt and the interface trap conductance Gp is established, showing theinadequacy of the Nyquist relation at very low temperature. Finally, a newformula for the oxide trapped charge 1/f noise, going beyond the classicalBoltzmann expression, is developed in terms of oxide trap density and effectivetemperature accounting for degenerate statistics.

On the fluctuation-dissipation of the oxide trapped charge in a MOSFET operated down to deep cryogenic temperatures