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Laser diodes based on solution-processable materials could benefit numeroustechnologies including integrated electronics and photonics, telecommunication,and medical diagnostics. An attractive system for implementing these devices iscolloidal semiconductor quantum dots (QDs). The primary challenge that hamperedprogress towards a QD laser diode (QLD) has been fast nonradiative Auger decayof optical-gain-active multicarrier states. Recently, this problem has beenresolved by employing continuously graded QDs (cg-QDs) wherein Augerrecombination is strongly suppressed. The use of these structures allowed fordemonstrations of optical gain with electrical pumping and optically-excitedlasing in multilayered LED-like devices. Here we report on achieving the nextcritical milestone towards a QLD, which is the demonstration of opticallyexcited amplified spontaneous emission from a fully functional high-currentdensity electroluminescent device. This advance has become possible due toexcellent optical gain properties of novel 'compact' cg-QDs and a new LEDarchitecture, which allows for concerted optimization of its optical andelectrical properties. The results of this work strongly suggest thefeasibility of the final step towards a functional QLD, which is thedemonstration of lasing with electrical pumping.

Optically Excited Two-Band Amplified Spontaneous Emission from a High-Current-Density Quantum-Dot LED