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Polarization-dependent scattering anisotropy of cylindrical nanowires hasnumerous potential applications in, for example, nanoantennas, photothermaltherapy, thermophotovoltaics, catalysis, sensing, optical filters and switches.In all these applications, temperature-dependent material properties play animportant role and often adversely impact performance depending on thedominance of either radiative or dissipative damping. Here, we employ numericalmodeling based on Mie scattering theory to investigate and compare thetemperature and polarization-dependent optical anisotropy of metallic (gold,Au) nanowires with indirect (silicon, Si) and direct (gallium arsenide, GaAs)bandgap semiconducting nanowires. Results indicate that plasmonic scatteringresonances in semiconductors, within the absorption band, deteriorate with anincrease in temperature whereas those occurring away from the absorption bandstrengthen as a result of the increase in phononic contribution.Indirect-bandgap thin ($20 \,\mathrm{nm}$) Si nanowires present low absorptionefficiencies for both the transverse electric (TE, $E_{\perp}$) and magnetic(TM, $E_{\parallel}$) modes, and high scattering efficiencies for the TM modeat shorter wavelengths making them suitable as highly efficient scatterers.Temperature-resilient higher-order anapole modes with their characteristic highabsorption and low scattering efficiencies are also observed in thesemiconductor nanowires ($r \! = \! 125 \! - \! 130$ nm) for the TEpolarization. Herein, the GaAs nanowires present $3 \! - \! 7$ times greaterabsorption efficiencies compared to the Si nanowires making them especiallysuitable for temperature-resilient applications such as scanning near-fieldoptical microscopy (SNOM), localized heating, non-invasive sensing or detectionthat require strong localization of energy in the near field.

Temperature-resilient anapole modes associated with TE polarization in semiconductor nanowire