English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

The unique properties of the emerging photonic materials - conductingnitrides and oxides - especially their tailorability, large damage thresholds,and the so-called epsilon-near-zero (ENZ) behavior, have enabled novel photonicphenomena spanning optical circuitry, tunable metasurfaces, and nonlinearoptical devices. This work explores direct control of the optical properties ofpolycrystalline titanium nitride (TiN) and aluminum-doped zinc oxide (AZO) bytailoring the film thickness, and their potential for ENZ-enhanced photonicapplications. We demonstrate that TiN-AZO bilayers act as Ferrell-Berremanmetasurfaces with thickness-tailorable epsilon-near-zero resonances in the AZOfilms operating in the telecom wavelengths spanning from 1470 to 1750 nm. Thebilayer stacks also act as strong light absorbers in the ultraviolet regimeemploying the radiative ENZ modes and the Fabry-Perot modes in the constituentTiN films. The studied Berreman metasurfaces exhibit optically-inducedreflectance modulation of 15% with picosecond response-time. Together with theoptical response tailorability of conducting oxides and nitrides, utilizing thefield-enhancement near the tunable ENZ regime could enable a wide range ofnonlinear optical phenomena, including all-optical switching, time refraction,and high-harmonic generation.

Tailoring the Thickness-Dependent Optical Properties of Conducting Nitrides and Oxides for Epsilon-Near-Zero-Enhanced Photonic Applications