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Defect engineering is foundational to classical electronic device developmentand for emerging quantum devices. Here, we report on defect engineering ofsilicon single crystals with ion pulses from a laser accelerator with ion fluxlevels up to 10^22 ions/cm^2/s. Low energy ions from plasma expansion of thelaser-foil target are implanted near the surface and then diffuse into siliconsamples that were locally pre-heated by high energy ions. We observe low energyion fluences of ~10^16 cm^-2, about four orders of magnitude higher than thefluence of high energy (MeV) ions. In the areas of highest energy deposition,silicon crystals exfoliate from single ion pulses. Color centers, predominantlyW and G-centers, form directly in response to ion pulses without a subsequentannealing step. We find that the linewidth of G-centers increase in areas withhigh ion flux much more than the linewidth of W-centers, consistent withdensity functional theory calculations of their electronic structure. Laser ionacceleration generates aligned pulses of high and low energy ions that expandthe parameter range for defect engineering and doping of semiconductors withtunable balances of ion flux, damage rates and local heating.

Defect engineering of silicon with ion pulses from laser acceleration