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Silicon inverted pyramids arrays have been suggested as one of the mostpromising structure for high-efficient ultrathin solar cells due to theirability of superior light absorption and low enhancement of surface area.However, the existing techniques for such fabrication are either expensive ornot able to create appropriate structure. Here, we present a lithography freemethod for the fabrication of inverted pyramid arrays by using a modified metalassisted chemical etching (MACE) method. The size and inter-inverted pyramidsspacing can also be controlled through this method. We used an isotropicchemical etching technique for this process to control the angle of etching,which leads to ultra-low reflection, even < 0.5%, of this nanostructure. Usingthis specification, we have predicted the expected solar cell parameters, whichexceeds the Lambertian limit. This report provides a new pathway to improve theefficiency of the ultrathin silicon solar cells at lower cost.

Lithography free method to synthesize the ultra-low reflection inverted-pyramid arrays for ultra-thin silicon solar cell