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This work demonstrates a large area process for atomically thin 2Dsemiconductors to unlock the technological upscale required for theircommercial uptake. The new atomic layer deposition (ALD) and conversiontechnique yields large area performance uniformity and tunability. Likegraphene, 2D Transition Metal Dichalcogenides (TMDCs) are prone to upscalingchallenges limiting their commercial uptake. They are challenging to growuniformly on large substrates and to transfer on alternative substrates whilethey often lack in large area electrical performance uniformity. The scalableALD process of this work enables uniform growth of 2D TMDCs on large area withindependent control of layer thickness, stoichiometry and crystallinity whileallowing chemical free transfers to application substrates. Field effecttransistors (FETs) fabricated on flexible substrates using the process presenta field effect mobility of up to 55 cm^2/Vs, subthreshold slope down to 80mV/dec and on/off ratios of 10^7. Additionally, non-volatile memory transistorsusing ferroelectric FETs (FeFETs) operating at +-5 V with on/off ratio of 107and a memory window of 3.25 V are demonstrated. These FeFETs demonstratestate-of-the-art performance with multiple state switching, suitable forone-transistor non-volatile memory and for synaptic transistors revealing theapplicability of the process to flexible neuromorphic applications.

Scalable, Highly Crystalline, 2D Semiconductor Atomic Layer Deposition Process for High Performance Electronic Applications