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Black phosphorus is a promising material to serve as the barrier of magnetictunnel junctions (MTJs) due to the weak van der Waals interlayer interactions.In particular, the special band features of black phosphorus may bringintriguing physical characteristics. Here, we study theoretically the effect ofband gap tunability of black phosphorus on the MTJs with black phosphorusbarrier. It is found that, the tunneling magnetoresistance (TMR) may achieve atransition from finite value to infinity owing to the variation of the band gapof black phosphorus. Combining with the latest experimental results of thepressure-induced band gap tunability, we further investigate the pressureeffect of TMR in the MTJs with black phosphorus barrier. The calculations showthat the pressure sensitivity can be quite high under appropriate parameters.Physically, the high sensitivity originates from the TMR transition phenomenon.To take advantage of the high pressure sensitivity, we propose and design adetailed structure of highly sensitive pressure sensors based on MTJs withblack phosphorus barrier, whose working mechanism is basically different fromthe convential pressure sensors. The present pressure sensors possess fouradvantages and benifits: (1) high sensitivity, (2) well anti-interference, (3)high spatial resolution, and (4) fast response speed. Our study may advance newresearch area for both the MTJs and pressure sensors.

TMR transition and highly sensitive pressure sensors based on magnetic tunnel junctions with black phosphorus barrier