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Moir\'e superlattice-induced sub-bands in twisted van der Waals homo- andhetero-structures govern their optical and electrical properties, renderingadditional degrees of freedom such as twist angle. Here, we demonstrate themoir\'e superlattice effects on the intralayer excitons and trions in a twistedbilayer of MoS$_2$ of H-type stacking at marginal twist angles. We identify theemission from localized and multiple delocalized sub-bands of intralayermoir\'e excitons and show their electrical modulation by the correspondingtrion formation. The electrical control of the oscillator strength of themoir\'e excitons also results in a strong tunability of resonant Ramanscattering. We find that the gate-induced doping significantly modulates theelectronic moir\'e potential, however leaves the excitonic moir\'e confinementunaltered. This effect, coupled with variable moir\'e trap filling by tuningthe optical excitation density, allows us to delineate the different phases oflocalized and delocalized moir\'e trions. We demonstrate that the moir\'eexcitons exhibit strong valley coherence that changes in a strikingnon-monotonic W-shape with gating due to motional narrowing. These observationsfrom the simultaneous electrostatic control of quasiparticle-dependent moir\'epotential will lead to exciting effects of tunable many-body phenomena inmoir\'e superlattices.

Electrically Tunable Localized versus Delocalized Intralayer Moir\'e Excitons and Trions in a Twisted MoS$_2$ Bilayer