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Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSbquantum wells (QWs) have comparable bulk band-gaps of about 10--18~meV. Theformer however features a band-gap vanishing with temperature, while the gap inInAs/GaSb QSHIs is rather temperature-independent.Here, we report on therealization of large inverted band-gap in strained three-layer InAs/GaInSb QWs.By temperature-dependent magnetotransport measurements of gated Hall bardevices, we extract a gap as high as 45 meV. Combining local and non-localmeasurements, we attribute the edge conductivity observed at temperatures up to40 K to the topological edge channels with equilibration lengths of a fewmicrometers. Our findings pave the way toward manipulating edge transport athigh temperatures in QW heterostructures.

Large inverted band-gap in strained three-layer InAs/GaInSb quantum wells