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We report the growth of electrically-resistive vanadium-doped beta-Ga2O3single crystals via the optical floating zone technique. By carefullycontrolling the growth parameters V-doped crystals with very high electricalresistivity compared to the usual n-type V-doped beta-Ga2O3 (ne~10^(18)/cm^3)can be synthesized. The optical properties of such high resistive V-dopedb-Ga2O3 are significantly different compared to the undoped and n-dopedcrystals. We study the polarization-dependent Raman spectra,polarization-dependent transmission, temperature-dependent photoluminescence inthe optical wavelength range and the THz transmission properties in the 0.2 -2.6 THz range. The V-doped insulating Ga2O3 crystals show strong birefringencewith refractive index contrast Dn of 0.3+-0.02 at 1 THz, suggesting it to be anideal material for optical applications in the THz region.

Vanadium doped beta-Ga2O3 single crystals: Growth, Optical and Terahertz characterization