English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

Heavy metal-based two-dimensional van der Waals materials have a large,coupled spin and valley Hall effect (SVHE) that has potential use inspintronics and valleytronics. Optical measurements of the SVHE have largelybeen performed below 30 K and understanding of the SVHE-induced spin/valleypolarizations that can be electrically generated is limited. Here, we study theSVHE in monolayer p-type tungsten diselenide (WSe2). Kerr rotation (KR)measurements show the spatial distribution of the SVHE at differenttemperatures, its persistence up to 160 K, and that it can be electricallymodulated via gate and drain bias. A spin/valley drift and diffusion modeltogether with reflection spectra data is used to interpret the KR data andpredict a lower-bound spin/valley lifetime of 4.1 ns below 90 K and 0.26 ns at160 K. The excess spin and valley per unit length along the edge is calculatedto be 109 per micron at 45 K, which corresponds to a spin/valley polarizationon the edge of 6%. These results are important steps towards practical use ofthe SVHE.

All Electrical Control and Temperature Dependence of the Spin and Valley Hall Effect in Monolayer WSe2 Transistors