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A CMOS pixel sensor, named Supix-1, is developed for a pixelated silicontracker for the Circular Electron-Positron Collider (CEPC) project. The sensor,consisted of nine sectors varying in pixel sizes, diode sizes and geometries,is fabricated with a 180 nm CMOS Image Sensor (CIS) process to study theparticle detection performance of enlarged pixels. In this work, theradiation-induced effects on the charge collection of the sensor under thefluence of 1 $\times$ 10^13 1 MeV neq/cm^2 are studied by the measurements withthe radioactive source of Fe-55 and the Technology Computer Aided Design (TCAD)simulations, since the radiation hardness of 6.8 $\times$ 10^12 1 MeV neq/cm^2per year for Non-Ionizing Energy Loss (NIEL) effects is required. Inmeasurements, the sensor gain has been calibrated using the k-$\alpha$ peak ofFe-55 before and after irradiation. The pixel-wise equivalent noise charge(ENC), charge collection efficiency (CCE) and signal-to-noise ratio (SNR) wereevaluated. The radiation-induced effects on cluster properties are studiedthrough a self-developed reconstruction algorithm. In TCAD simulations, chargecollections in 5 $\times$ 5 pixel matrixes for two typical impinging cases ofincident particles were simulated with and without irradiation. Bothmeasurements and simulations indicate that enlarged pixels with area of 21$\mu$m $\times$ 84 $\mu$m, though suffering greater loss on sensor performancethan small pixels do, still have satisfactory noise and charge collectionperformance after irradiation for particle tracking in the upcoming colliderdetectors.

Radiation hardness study on a CMOS pixel sensor for charged particle tracking