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The junctions formed between gate contact and III-nitride are crucialcomponents of GaN-based electronics and optoelectronics. In this work,solution-processed inorganic Ti3C2Tx MXene films were spray coated on theAlGaN/GaN epitaxial wafer as the gate contact. The workfounction of MXene filmswas effectively enhanced by partial oxidization process, and accordingly, thegate leakage current and off-state drain current were significantly suppressed.The van der Waals heterojunction between MXene films and III-nitride withoutdirect chemical bonding retained the pristine atomically flat native oxides ofIII-nitride, record high Ion/Ioff current ratio of 1013, and near idealsubthreshold swing of 61 mV/dec was achieved in the Schottky-Type gate GaNHEMTs. In addition, the MXene gate GaN HEMTs display superior electron mobilityand transcoductance, high uniformity with 20 measured transistors. Theunprecedented performance can be correlated to the damage-free interfacebetween MXene and III-nitride, negligible atomic diffusion of MXene into thesemiconductor layer, and excellent adhesion between MXene and III-nitride. Thiswork provides an alternative method to create contact not only in GaN HEMTs butalso in other electronic and optoelectronic devices which uniquely featurescost-effective, non-vacuum, high deposition rate, and damage-free properties.

Solution-processed van der Waals heterojunction as the damage-free gate contact for high performance GaN HEMTs