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An outstanding challenge for color center-based quantum informationprocessing technologies is the integration of optically-coherent emitters intoscalable thin-film photonics. Here, we report on the integration ofnear-transform-limited silicon vacancy (V$_{\text{Si}}$) defects into microdiskresonators fabricated in a CMOS-compatible 4H-Silicon Carbide-on-Insulatorplatform. We demonstrate a single-emitter cooperativity of up to 0.8 as well asoptical superradiance from a pair of color centers coupled to the same cavitymode. We investigate the effect of multimode interference on the photonscattering dynamics from this multi-emitter cavity quantum electrodynamicssystem. These results are crucial for the development of quantum networks insilicon carbide and bridge the classical-quantum photonics gap by unitingoptically-coherent spin defects with wafer-scalable, state-of-the-artphotonics.

Optical superradiance of a pair of color centers in an integrated silicon-carbide-on-insulator microresonator