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The optical properties of V graded InGaN solar cells are studied. GradedInGaN well structures with the indium composition increasing then decreasing ina V shaped pattern have been designed. Through polarization doping, thisnaturally creates alternating p-type and n-type regions. Separate structuresare designed by varying the indium alloy profile from GaN to maximum indiumconcentrations ranging from 20% to 80%, while maintaining a constant overallstructure thicknesses of 100 nm. The solar cell parameters under fully strainedand relaxed conditions are considered. The results show that a maximumefficiency of 5.5%, under fully strained condition occurs at x=60%. Solar cellefficiency under relaxed conditions increases to a maximum of 8.3% at 90%.While Vegards law predicts the bandgap under relaxed conditions, a Vegard likelaw is empirically determined from the output of Nextnano for varying Incompositions in order to calculate solar cell parameters under strain.

Modeling of V graded In(x)Ga(1-x)N solar cells: comparison of strained and relaxed features