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We demonstrate spatial modification of the optical properties of thin-filmmetal oxides, zinc oxide and vanadium dioxide as representatives, using acommercial focused ion beam (FIB) system. Using a Ga+ FIB and thermalannealing, we demonstrated variable doping of a band semiconductor, zinc oxide(ZnO), achieving carrier concentrations from 10^18 cm-3 to 10^20 cm-3. Usingthe same FIB without subsequent thermal annealing, we defect-engineered acorrelated semiconductor, vanadium dioxide (VO2), locally modifying itsinsulator-to-metal transition (IMT) temperature by range of ~25 degrees C. Sucharea-selective modification of metal oxides by direct writing using a FIBprovides a simple, mask-less route to the fabrication of optical structures,especially when multiple or continuous levels of doping or defect density arerequired.

Tuning carrier density and phase transitions in oxide semiconductors using focused ion beams