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Topological semimetals (TSs) are promising candidates for low-powerspin-orbit torque (SOT) devices due to their large charge-to-spin conversionefficiency. Here, we investigated the charge-to-spin conversion efficiency ofamorphous PtSn4 (5 nm)/CoFeB (2.5-12.5 nm) layered structures prepared by amagnetron sputtering method at room temperature. The charge-to-spin ratio ofPtSn4/CoFeB bilayers was 0.08, characterized by a spin torque ferromagneticresonance (ST-FMR) technique. This ratio can further increase to 0.14 byinducing dopants, like Al and CoSi, into PtSn4. The dopants can also decrease(Al doping) or increase (CoSi doping) the resistivity of PtSn4. The workproposed a way to enhance the spin-orbit coupling (SOC) in amorphous TSs withdopants.

Element Doping Enhanced Charge-to-Spin Conversion Efficiency in Amorphous PtSn4 Dirac Semimetal