English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

BCl$_3$ is a promising candidate for atomic-precision acceptor doping in Si,but optimizing the electrical properties of structures created with thistechnique requires a detailed understanding of adsorption and dissociationpathways for this precursor. Here, we use density functional theory andscanning tunneling microscopy (STM) to identify and explore these pathways forBCl$_3$ on Si(100) at different annealing temperatures. We demonstrate thatBCl$_3$ adsorbs selectively without a reaction barrier, and subsequentlydissociates relatively easily with reaction barriers $\approx$1 eV. Using thisdissociation pathway, we parameterize a Kinetic Monte Carlo model to predict Bincorporation rates as a function of dosing conditions. STM is used to imageBCl$_{3}$ adsorbates, identifying several surface configurations and trackingthe change in their distribution as a function of the annealing temperature,matching predictions of the kinetic model well. This straightforward pathwayfor atomic-precision acceptor doping helps enable a wide range of applicationsincluding bipolar nanoelectronics, acceptor-based qubits, and superconductingSi.

Reaction pathways of BCl$_3$ for acceptor delta-doping of silicon