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Integrated thin-film lithium niobate (LN) electro-optic (EO) modulators ofbroad bandwidth, low insertion loss, low cost and high production rate areessential elements in contemporary inter-connection industries and disruptiveapplications. Here, we demonstrated the design and fabri-cation of a highperformance thin-film LN EO modulator using photolithography assistedchemo-mechanical etching (PLACE) technology. Our device shows a 3-dB bandwidthover 50 GHz, along with a comparable low half wave voltage-length product of2.16 Vcm. We obtain a fiber-to-fiber insertion loss of 2.6 dB.

High-production-rate fabrication of low-loss lithium niobate  electro-optic modulators using photolithography assisted chemo-mechanical  etching (PLACE)