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Two-dimensional materials have attracted lots of research interests due tothe fantastic properties that are unique to the bulk counterparts. In thispaper, from the state-of-the-art first-principles, we predicted the stablestructure of monolayer counterpart of the {\gamma}-CuI (Cuprous Iodide), whichis a p-type wide bandgap semiconductor. The monolayer CuI presentsmultifunctional superiority in terms of electronic, optical, and thermaltransport properties. Specifically, the ultralow thermal conductivity of 0.116Wm-1K-1 is predicted for monolayer CuI, which is much lower than {\gamma}-CuI(0.997 Wm-1K-1) and other typical semiconductors. Moreover, an ultrawide directbandgap of 3.57 eV is found in monolayer CuI, which is larger than {\gamma}-CuI(2.95-3.1 eV), promoting the applications in nano-/optoelectronics with betteroptical performance. The ultralow thermal conductivity and direct wide bandgapof monolayer CuI as reported in this study would promise its potentialapplications in transparent and wearable electronics.

The record low thermal conductivity of monolayer Cuprous Iodide (CuI) with direct wide bandgap