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Electron Spin Resonance-Scanning Tunneling Microscopy (ESR-STM) of C60radical ion on graphene is a first demonstration on radical ions. ESR-STMsignal at g=2.00 was measured in accordance with macroscopic ESR of fullereneradical ion. The ESR-STM signal was bias voltage dependent, as it reflects thecharge state of the molecule. The signal appears in the bias voltage whichenables the ionization of the lowest unoccupied molecular orbital (LUMO)(creation of radical anion) and the highest occupied molecular orbital (HOMO(creation of a radical cation) of the C60 molecule when it deposited ongraphene.  The linewidth provides information on the lifetime of the free radical. Inseveral experiments, a 13C hyperfine splitting was observed, and a change inthe phase of the ESR-STM peak as a function of the speed of the magnetic fieldsweep was changed. This might be used to provide information on the relaxationtimes of the molecules. In parallel, ESR-STM signal at g=1.6 was ascribed toTungsten oxide (W5+) at the tip apex, which is not bias voltage dependent.  The ability of ESR-STM to explore non paramagnetic molecules, significantlybroadens the scope of this technique.

Electron Spin Resonance Scanning Tunneling Microscope of Non-Magnetic Molecules