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Plane-parallel resonator configuration is proposed for high-NA EUVlithography, where the lithography mask and the wafer are parallelly arrangedthrough two focusing mirrors. EUV light is injected through an off-axisrotating mirror at the back focal plane and provides off-axis illumination(precession beam) to the mask and bounces back twice (at the mask and thewafer), finally goes out from the resonator through the rotating mirror. Thisis a single path cavity, there is no resonant effect. The orbital error orvibration of the rotating mirror do not affect on the imaging quality. Theoff-axis illumination is essential for high-NA optics, which recovers the highspatial frequency, and improves the edge contrast. The matched annular-apertureis located at the back-focal plane of the projector mirror, which acts asFourier filter passing only the horizontally scattered waves reflected by thedensity modulations F(kx,ky,0) : 0-th z-order Fourier component of the mask.During single precession of the beam, this system creates 2D image of thenormally projected density map of the mask pattern onto the wafer, where thelongitudinal variation (3D effect) disappears, and thus the mask-shadowingproblem is moderated. The depth-of-focus (DOF) is long, and also the imagecontrast becomes very high. As the objective mirror, Schwarzschild objective orWolter telescope will be a suitable candidate. Wolter telescope is axisymmetricand lighter than conventional solid concave mirror, therefore, a largerdiameter can be fabricated in high precession. By optimizing Wolter telescope,it may be possible to cover the wafer field size 26 mm x 33 mm of singlepatterning. Example parameter design was performed, seems technically feasible.

Proposal of Plane-Parallel Resonator Configuration for High-NA EUV Lithography