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With the example of LaInO$_{3}$/BaSnO$_3$, we demonstrate how both densityand distribution of a two-dimensional electron gas (2DEG) formed at theinterface between these perovskite oxides, can be efficiently controlled by aferroelectric functional material. A polarization induced in a BaTiO$_3$ layerpointing toward the interface enhances the polar discontinuity which, in turn,significantly increases the 2DEG density and confinement, while, the oppositepolarization depletes the 2DEG. Our predictions and analysis, based onfirst-principles calculations, can serve as a guide for designing such materialcombinations to be used in electronic devices.

Two-dimensional electron gas at LaInO$_3$/BaSnO$_3$ interfaces controlled by a ferroelectric layer