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The application of color centers in wide-bandgap semiconductors to nanoscalesensing and quantum information processing largely rests on our knowledge ofthe surrounding crystalline lattice, often obscured by the countless classes ofpoint defects the material can host. Here we monitor the fluorescence from anegatively charged nitrogen-vacancy (NV-) center in diamond as we illuminateits vicinity. Cyclic charge state conversion of neighboring point defectssensitive to the excitation beam leads to a position-dependent stream ofphoto-generated carriers whose capture by the probe NV- leads to a fluorescencechange. This "charge-to-photon" conversion scheme allows us to image otherindividual point defects surrounding the probe NV, including non-fluorescent"single-charge emitters" that would otherwise remain unnoticed. Given theubiquity of color center photo-chromism, this strategy may likely findextensions to material systems other than diamond.

Imaging dark charge emitters in diamond via carrier-to-photon conversion