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The results of RHEED, FTIR and Raman spectroscopy study of silicon andgermanium films with the thickness up to 200 nm grown from molecular beams ondielectric Si$_3$N$_4$/SiO$_2$/Si(001) substrates are presented. Noticeablechanges of the intensity of the N$-$H and Si$-$N absorption bands have beenobserved in the IR absorbance spectra as a result of the deposition of thesilicon and germanium films. The thicker was the deposited film, the moreconsiderable were the decrease of N$-$H absorption band intensity and theincrease in that of the Si$-$N band. This tendency has been observed during thegrowth of both amorphous and polycrystalline Si or Ge films. The reduction ofIR absorption at the band assigned to the N$-$H bond vibration is explained bybreaking of these bonds followed by the diffusion of the hydrogen atoms fromthe Si$_3$N$_4$ layer into the growing film of silicon or germanium. The effectof the deposited film thickness on the diffusion of hydrogen is discussedwithin a model of the diffusion of hydrogen atoms controlled by the differencein chemical potentials of hydrogen atoms in the dielectric Si$_3$N$_4$ layerand the growing silicon or germanium film. Hydrogen atoms escape from theSi$_3$N$_4$ layer only during the deposition of a Si or Ge film when itsthickness gradually grows. The interruption of the film growth stops themigration of hydrogen atoms into the film because of the decline in thechemical potential difference.

Influence of the thickness of Si and Ge films deposited on  Si$_3$N$_4$/SiO$_2$/Si substrates on their structure and diffusion of  hydrogen atoms from Si$_3$N$_4$ layers