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High quality 940 nm Al$_x$Ga$_{1-x}$As n-type distributed Bragg reflectors(DBRs) were successfully monolithically grown on off-cut Ge (100) substrates.The Ge-DBRs have reflectivity spectra comparable to those grown on conventionalbulk GaAs substrates and have smooth morphology, reasonable periodicity anduniformity. These results strongly support VCSEL growth and fabrication on morescalable bulk Ge substrates for large scale production of AlGaAs-based VCSELs.

Monolithic integration of 940 nm AlGaAs distributed Bragg reflectors on bulk Ge substrates