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As the characteristic dimensions of modern top-down devices are gettingsmaller, such devices reach their operational limits given by quantummechanics. Thus, two-dimensional (2D) structures appear as one of the bestsolutions to meet the ultimate challenges of modern optoelectronic andspintronic applications. The representative of III-V semiconductors, galliumnitride (GaN), is a great candidate for UV and high-power applications at ananoscale level. We propose a new way of fabrication of 2D GaN on the Si(111)7x7 surface using post-nitridation of Ga droplets by hyperthermal (E < 50 eV)nitrogen ions at low substrate temperatures (T < 220{\deg}C). Both depositionof Ga droplets and their post-nitridation is carried out using a specialatom-ion beam source developed in our group. This low-temperature dropletepitaxy (LTDE) approach provides well-defined ultra-high vacuum growthconditions during the whole fabrication process resulting in high purity GaNnanostructures. A sharp interface between the GaN nanostructures and thesilicon substrate together with a correct elemental composition ofnanostructures was confirmed by TEM. In addition, SEM, X-ray photoelectronspectroscopy (XPS), AFM and Auger microanalysis showed unique characteristicsof the fabricated GaN nanostructures.

Low temperature 2D GaN growth on Si (111) 7x7 assisted by hypethermal nitrogen ions