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Nearly localized moire flat bands in momentum space, arising at particulartwist angles, are the key to achieve correlated effects in transition-metaldichalcogenides. Here, we use angle-resolved photoemission spectroscopy (ARPES)to visualize the presence of a flat band near the Fermi level of van der Waals(vdW) WSe2/MoSe2 heterobilayer grown by molecular beam epitaxy. This flat bandis localized near the K point of the Brillouin zone and has a width of severalhundred meVs. By combining ARPES measurements with density functional theory(DFT) calculations, we confirm the coexistence of different domains, namely thereference 2H stacking without layer misorientation and regions with arbitrarytwist angles. For the 2H-stacked heterobilayer, our ARPES results show stronginterlayer hybridization effects, further confirmed by complementary micro-Raman spectroscopy measurements. The spin-splitting of the valence band at K isdetermined to be 470 meV. The valence band maximum (VBM) position of theheterobilayer is located at the Gamma point. The energy difference between theVBM at Gamma and the K point is of -60 meV, which is a stark differencecompared to individual 1L WSe2 and 1L WSe2, showing both a VBM at K.

Hybridization and localized flat band in the WSe2/MoSe2 heterobilayer grown by molecular beam epitaxy