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Intimate integration of memory devices with logic transistors is a frontierchallenge in computer hardware. This integration is essential for augmentingcomputational power concurrently with enhanced energy efficiency in big-dataapplications such as artificial intelligence. Despite decades of efforts,reliable, compact, energy efficient and scalable memory devices are elusive.Ferroelectric Field Effect Transistors (FE-FETs) are a promising candidate buttheir scalability and performance in a back-end-of-line (BEOL) process remainunattained. Here, we present scalable BEOL compatible FE-FETs usingtwo-dimensional (2D) MoS2 channel and AlScN ferroelectric dielectric. We havefabricated a large array of FE-FETs with memory windows larger than 7.8 V,ON/OFF ratios of greater than 10^7, and ON current density greater than 250uA/um, all at ~80 nm channel lengths. Our devices show stable retention up to20000 secs and endurance up to 20000 cycles in addition to 4-bit pulseprogrammable memory features thereby opening a path towards scalable 3Dhetero-integration of 2D semiconductor memory with Si CMOS logic.

Scalable CMOS-BEOL compatible AlScN/2D Channel FE-FETs