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The optical properties of a hexagonal Boron Nitride (BN) monolayer across theUV spectrum are studied by tuning its planar buckling. The strong$\sigma\text{-}\sigma$ bond through sp$^2$ hybridization of a flat BN monolayercan be changed to a stronger $\sigma\text{-}\pi$ bond through sp$^3$hybridization by increasing the planar buckling. This gives rise to the $s$-and $p$-orbital contributions to form a density of states around the Fermienergy, and these states dislocate to a lower energy in the presence of anincreased planar buckling. Consequently, the wide band gap of a flat BNmonolayer is reduced to a smaller band gap in a buckled BN monolayer enhancingits optical activity in the Deep-UV region. The optical properties such as thedielectric function, the reflectivity, the absorption, and the opticalconductivity spectra are investigated. It is shown that the absorption rate canbe enhanced by $(12\text{-}15)\%$ for intermediate values of planar buckling inthe Deep-UV region, and $(15\text{-}20)\%$ at higher values of planar bucklingin the near-UV region. Furthermore, the optical conductivity is enhanced byincreased planar buckling in both the visible and the Deep-UV regions dependingon the direction of the polarization of the incoming light. Our results may beuseful for optoelectronic BN monolayer devices in the UV range including UVspectroscopy, deep-UV communications, and UV photodetectors.

Enhanced ultraviolet absorption in BN monolayers caused by tunable buckling