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Light trapping photonic crystal (PhC) patterns on the surface of Si solarcells provides a novel opportunity to approach the theoretical efficiency limitof 32.3%, for light-to-electrical power conversion with a single junction cell.This is beyond the efficiency limit implied by the Lambertian limit of raytrapping 29%. The interference and slow light effects are harnessed forcollecting light even at the long wavelengths near the Si band-gap. We comparetwo different methods for surface patterning, that can be extended to largearea surface patterning: 1) laser direct write and 2) step-&-repeat 5-timesreduction projection lithography. Large area throughput limitations of thesemethods are compared with the established electron beam lithography (EBL)route, which is conventionally utilised but much slower than the presentedmethods. Spectral characterisation of the PhC light trapping is compared forsamples fabricated by different methods. Reflectance of Si etched via laserpatterned mask was 7% at visible wavelengths and was comparable with Sipatterned via EBL made mask. The later pattern showed a stronger absorbancethan the Lambertian limit (M.-L. Hsieh et al., Sci. Rep. 10, 11857 (2020)).

Beyond Lambertian light trapping for large-area silicon solar cells: fabrication methods