English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

Achieving self-consistent convergence with the conventional effective-massapproach at ultra-low temperatures (below $4.2~K$) is a challenging task, whichmostly lies in the discontinuities in material properties (e.g.,effective-mass, electron affinity, dielectric constant). In this article, wedevelop a novel self-consistent approach based on cell-centered Finite-Volumediscretization of the Sturm-Liouville form of the effective-massSchr{\"o}dinger equation and generalized Poisson's equation (FV-SP). We applythis approach to simulate the one-dimensional electron gas (1DEG) formed at theSi-SiO$_2$ interface via a top gate. We find excellent self-consistentconvergence from high to extremely low (as low as $50~mK$) temperatures. Wefurther examine the solidity of FV-SP method by changing external variablessuch as the electrochemical potential and the accumulative top gate voltage.Our approach allows for counting electron-electron interactions. Our resultsdemonstrate that FV-SP approach is a powerful tool to solve effective-massHamiltonians.

The cell-centered Finite-Volume self-consistent approach for heterostructures: 1D electron gas at the Si-SiO2 interface