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Prototypes for hot-carrier solar cells based on type-II InAs/AlAsSb multiplequantum wells are examined for AC photoconductivity as a function of latticetemperature and photoexcitation energy to determine the photoexcited chargecarrier transport. These samples previously exhibit an excitation energy onsetof a metastable regime in their short time charge carrier dynamics thatpotentially improves their applicability for hot-carrier photovoltaicapplications. The transport results illustrate that the AC photoconductivity islarger in the dynamic regime corresponding to the metastability as a result ofhigher excitation photocarrier densities. In this excitation regime, the ACphotoconductivity is accompanied by slightly lower carrier mobility, arisingfrom the plasma-like nature of carriers scattered by Auger recombination.Outside of this regime, higher mobility is observed as a result of a lowerexcitation density that is more readily achievable by solar concentration.Additionally, at ambient temperatures, more scattering events are accompaniedby slightly lower mobility, but the excitation dependence indicates that thisis accompanied by an ambipolar diffusion length that is greater than half amicron. These transport properties are consistent with good quality inorganicelemental and III-V semiconductor solar cells and far exceed those of novelmaterials. The transport results complement the dynamics observed in type-IIInAs/AlAsSb and can guide the design of hot-carrier solar cells based on theseand related materials.

Non-equilibrium hot-carrier transport in type-II multiple-quantum wells for solar-cell applications