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Moir\'e materials have become one of the most active fields in materialscience in recent years due to their high tunability, and their uniqueproperties emerge from the Moir\'e-scale structure modulation. Here, we proposetwisted bilayer Bi$_2$(Te$_{1-x}$Se$_x$)$_3$ as a new Moir\'e material wherethe Moir\'e-scale modulation induces a topological phase transition. We show,in twisted bilayer Bi$_2$(Te$_{1-x}$Se$_x$)$_3$, a topological insulator domainand a normal insulator domain coexist in the Moir\'e lattice structure, andedge states on the domain boundary make nearly flat bands that dominate thematerial properties. The edge states further contribute to a Moir\'e-scale bandinversion, resulting in Moir\'e-scale topological states. There arecorresponding Moir\'e-scale edge states and they are so to speak "edge statefrom edge state", which is a unique feature of twisted bilayerBi$_2$(Te$_{1-x}$Se$_x$)$_3$. Our result not only proposes novel quantum phasesin twisted bilayer Bi$_2$Te$_3$-family, but also suggests the twisting ofstacking sensitive topological materials paves an avenue in the search fornovel quantum materials and devices.

Quantum spin Hall effect from multi-scale band inversion in twisted bilayer Bi$_2$(Te$_{1-x}$Se$_x$)$_3$