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Microscopy with extreme ultraviolet (EUV) radiation holds promise forhigh-resolution imaging with excellent material contrast, due to the shortwavelength and numerous element-specific absorption edges available in thisspectral range. At the same time, EUV radiation has significantly largerpenetration depths than electrons. It thus enables a nano-scale view intocomplex three-dimensional structures that are important for material science,semiconductor metrology, and next-generation nano-devices. Here, we presenthigh-resolution and material-specific microscopy at 13.5 nm wavelength. Wecombine a highly stable, high photon-flux, table-top EUV source with aninterferometrically stabilized ptychography setup. By utilizing structured EUVillumination, we overcome the limitations of conventional EUV focusing opticsand demonstrate high-resolution microscopy at a half-pitch lateral resolutionof 16 nm. Moreover, we propose mixed-state orthogonal probe relaxationptychography, enabling robust phase-contrast imaging over wide fields of viewand long acquisition times. In this way, the complex transmission of anintegrated circuit is precisely reconstructed, allowing for the classificationof the material composition of mesoscopic semiconductor systems.

Material-specific high-resolution table-top extreme ultraviolet microscopy