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High harmonic generation (HHG) in solids reflects the underlyingnonperturbative nonlinear dynamics of electrons in a strong light field and isa powerful tool for ultrafast spectroscopy of electronic structures.Photo-carrier doping allows us to understand the carrier dynamics and thecorrelations between the carriers in the HHG process. Here, we study the effectof incoherent electron-hole pairs on HHG in an atomically thin semiconductor.The experimentally observed response to photo-carrier doping is successfullyreproduced in numerical simulations incorporating the photo-excited carrierdistribution, excitonic Coulomb interaction and electron-electron scatteringeffects. The simulation results reveal that the presence of photo-carriersenhances the intraband current that contributes to high harmonics below theabsorption edge. We also clarify that the excitation-induced dephasing processrather than the phase-space filling effect is the dominant mechanism reducingthe higher order harmonics above the absorption edge. Our work provides adeeper understanding of high harmonic spectroscopy and the optimum conditionsfor generating extreme ultraviolet light from solids.

Effect of incoherent electron-hole pairs on high harmonic generation in an atomically thin semiconductor