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A broad family of the nowadays studied low-dimensional systems, including 2Dmaterials, demonstrate many fascinating properties, which however depend on theatomic composition as well as on the system dimensionality. Therefore, thestudies of the electronic correlation effects in the new 2D materials is ofparamount importance for the understanding of their transport, optical andcatalytic properties. Here, by means of electron spectroscopy methods incombination with density functional theory calculations we investigate theelectronic structure of a new layered van der Waals FePX$_3$ (X: S, Se)materials. Using systematic resonant photoelectron spectroscopy studies weobserved strong resonant behavior for the peaks associated with the $3d^{n-1}$final state at low binding energies for these materials. Such observationsclearly assign FePX$_3$ to the class of Mott-Hubbard type insulators for whichthe top of the valence band is formed by the hybrid Fe-S/Se electronic states.These observations are important for the deep understanding of this new classof materials and draw perspectives for their further applications in differentapplication areas, like (opto)spintronics and catalysis.

Mott-Hubbard Insulating State for the Layered van der Waals FePX$_3$ (X:S, Se) As Revealed by NEXAFS and Resonant Photoelectron Spectroscopy