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The continuous scaling of semiconductor-based technologies to micron andsub-micron regimes has resulted in higher device density and lower powerdissipation. Many physical phenomena such as self-heating or current leakagebecome significant at such scales, and mapping current densities to revealthese features is decisive for the development of modern electronics. However,advanced non-invasive technologies either offer low sensitivity or poor spatialresolution and are limited to two-dimensional spatial mapping. Here we useshallow nitrogen-vacancy centres in diamond to probe Oersted fields created bycurrent flowing within a multi-layered integrated circuit in pre-development.We show the reconstruction of the three-dimensional components of the currentdensity with a magnitude down to $\approx 10 \,\rm \mu A / \mu m^2$ andsub-micron spatial resolution capabilities at room temperature. We also reportthe localisation of currents in different layers and observe anomalous currentflow in an electronic chip. Further improvements using decoupling sequences andmaterial optimisation will lead to nA-current detection at sub-micron spatialresolution. Our method provides therefore a decisive breakthrough towardsthree-dimensional current mapping in technologically relevant nanoscaleelectronics chips.

Non-invasive imaging of three-dimensional integrated circuit activity using quantum defects in diamond